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Project E2: Atomic structure and electronic properties of silicide nanowires

Mario Dähne, Joachim Wollschläger

 

The aim of this project is to study the formation, atomic structure, and electronic properties of metallic nanowires, with an emphasis on silicide nanowires. The nanowires will be grown using different rare earth and transition metals on both planar and vicinal silicon surfaces and by systematic variation of the metal exposure and the thermal conditions during silicide formation. Also the capping of nanowires will be investigated. This will result in a variety of nanowire systems with different structural properties such as the specific atomic arrangement, the overall dimensions, as well as the lateral nanowire distances, which will be characterized on the atomic scale using scanning tunneling microscopy (STM), grazing incidence x-ray diffraction (GIXRD), and low-energy electron diffraction with spot-profile analysis (SPA-LEED). Correspondingly, also different electronic properties will be achieved regarding e. g. their metallicity or the dimensionality of the electronic dispersion, as studied by angle-resolved photo-electron spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). Such a detailed knowledge on the atomic structure and electronic band structure of the nanowires is an important basis for the theory projects as well as for other experimental projects within this research unit, where the vibronic, plasmonic, optical, and transport properties as well as low-temperature phase transitions are studied.

(Picture: Electronic band dispersion taken along DySi2 nanowires grown on a vicinal Si(001) surface derived by ARPES)