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Prof. Dr. Mario Dähne

Office address

Institut für Festkörperphysik Technische Universität Berlin

Hardenbergstraße 36, 10623 Berlin

Phone: +49 (0)30 314 24698

Fax: +49 (0)30 314 26181

Email: daehne(at)physik.tu-berlin.de

Web: www.ifkp.tu-berlin.de/menue/arbeitsgruppen/agdaehne/

Project E2

Atomic structure and electronic properties of silicide nanowires

Areas of Research

• Semiconductor surfaces and interfaces

• Nanostructures on semiconductor surfaces

• Embedded semiconductor nanostructures

Selected Publications

1. R. Timm, H. Eisele, A. Lenz, L. Ivanova, V. Vossebürger, T. Warming, D. Bimberg, I. Farrer, D.A. Ritchie, and M. Dähne,

Confined states of individual type-II GaSb/GaAs quantum rings studied by crosssectional scanning tunneling spectroscopy

Nano Lett. 10, 3972 (2010).

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2. M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, C. Prohl, B. Höpfner, P. Stojanov, E. Huwald, J. Riley, and M. Dähne,

Electronic properties of dysprosium silicide nanowires on Si(557)

J. Appl. Phys. 108, 064304 (2010).

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3. A. Lenz, H. Eisele, J. Becker, J.-H. Schulze, T.D. Germann, F. Luckert, K. Pötschke, E. Lenz, L. Ivanova, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne,

Atomic structure and optical properties of InAs submonolayer depositions in GaAs

J. Vac. Sci. Technol. B 29, 04D104 (2011).

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4. M. Wanke, K. Löser, G. Pruskil, D. Vyalikh, S.L. Molodtsov, S. Danzenbächer, C. Laubschat, and M. Dähne,

Electronic properties of self-assembled rare-earth silicide nanowires on Si(001)

Phys. Rev. B 83, 205417 (2011).

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5. Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele,

Direct measurement of the band gap and Fermi level position at InN(11 ¯2 0 )

Appl. Phys. Lett. 98, 062103 (2011).

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